absolute maximum ratings parameter units i d @ v gs = -10v, t c = 25c continuous drain current -31 i d @ v gs = -10v, t c = 100c continuous drain current -19 i dm pulsed drain current -124 p d @ t c = 25c max. power dissipation 125 w linear derating factor 1.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 340 mj i ar avalanche current -19 a e ar repetitive avalanche energy 12.5 mj dv/dt peak diode recovery dv/dt -4.0 v/ns t j operating junction -55 to 150 t stg storage temperature range package mounting surface temperature 300 (for 5 s) weight 2.6 (t ypical) g c a www.irf.com 1 product summary part number bv dss r ds(on) i d IRF5N5210 -100v 0.060 ? -31a
hexfet ? power mosfet IRF5N5210 surface mount (smd-1) 100v, p-channel fifth generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. these devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. smd-1 features: low r ds(on) avalanche energy ratings dynamic dv/dt rating simple drive requirements ease of paralleling hermetically sealed surface mount light weight pd-94154a
IRF5N5210 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -100 ? ? v v gs = 0v, i d = -250 a ? bv dss / ? t j temperature coefficient of breakdown ? -0.11 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.06 ? v gs = -10v, i d = -19a resistance v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -250 a g fs forward transconductance 10 ? ? s v ds = -15v, i ds = -19a i dss zero gate voltage drain current ? ? -25 v ds = -100v ,v gs = 0v ? ? -250 v ds = -80v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? -100 v gs = -20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 215 v gs =-10v, i d = -19a q gs gate-to-source charge ? ? 30 nc v ds = -80v q gd gate-to-drain (?miller?) charge ? ? 115 t d (on) turn-on delay time ? ? 28 v dd = -50v, i d = -19a, t r rise time ? ? 150 v gs =-10v, r g = 2.5 ? t d (off) turn-off delay time ? ? 103 t f fall time ? ? 116 l s + l d total inductance ? 4.0 ? measured from the center of drain pad to center of source pad c iss input capacitance ? 2700 ? v gs = 0v, v ds = -25v c oss output capacitance ? 830 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 470 ? na nh ns a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 1.0 c/w note: corresponding spice and saber models are available on international rectifier website.
source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? -31 i sm pulse source current (body diode) ? ? -124 v sd diode forward voltage ? ? -1.6 v t j = 25c, i s = -19a, v gs = 0v t rr reverse recovery time ? ? 290 ns t j = 25c, i f = -19a, di/dt -100a/ s q rr reverse recovery charge ? ? 2.1 cv dd -50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a
www.irf.com 3 IRF5N5210 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v -4.5v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -4.5v 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v -4.5v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -4.5v 1 10 100 1000 4 6 8 10 12 v = -50v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -31a
IRF5N5210 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 0 1000 2000 3000 4000 5000 6000 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 40 80 120 160 200 240 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -19a v = -20v ds v = -50v ds v = -80v ds 1 10 100 1000 -v ds , drain-tosource voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on)
www.irf.com 5 IRF5N5210 fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature
1 0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 0 5 10 15 20 25 30 35 t , case temperature ( c) -i , drain current (a) c d v gs 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
IRF5N5210 6 www.irf.com fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v t p v ( br ) dss i as fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 25 50 75 100 125 150 0 200 400 600 800 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -8.5a -12a -19a v gs
www.irf.com 7 IRF5N5210 repetitive rating; pulse width limited by maximum junction temperature. i sd -19a, di/dt -390 a/ s, v dd -100v, t j 150c pulse width 300 s; duty cycle 2% v dd = -25 v, starting t j = 25c, l = 1.9 peak i as = -19a, v gs = -10v, r g = ? footnotes: p ad assignments case outline and dimensions ? smd-1 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 09/2008
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